DocumentCode
3478048
Title
High-gain amplifier with n-type transistors
Author
Bahubalindruni, Pydi ; Grade Tavares, V. ; Guedes de Oliveira, Pedro ; Barquinha, Pedro ; Martins, Rui P. ; Fortunato, Elvira
Author_Institution
Fac. of Eng., Univ. of Porto, Porto, Portugal
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions.
Keywords
CMOS integrated circuits; amplifiers; thin film transistors; BSIM3V3 model; CMOS technology; complementary type transistor; complete identical bias conditions; high-gain amplifier topology; single n-type enhancement transistors; size 0.35 mum; transparent TFT technologies; transparent thin-film transistor; Bandwidth; Gain; Logic gates; Power demand; Topology; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628203
Filename
6628203
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