Title :
High-gain amplifier with n-type transistors
Author :
Bahubalindruni, Pydi ; Grade Tavares, V. ; Guedes de Oliveira, Pedro ; Barquinha, Pedro ; Martins, Rui P. ; Fortunato, Elvira
Author_Institution :
Fac. of Eng., Univ. of Porto, Porto, Portugal
Abstract :
A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions.
Keywords :
CMOS integrated circuits; amplifiers; thin film transistors; BSIM3V3 model; CMOS technology; complementary type transistor; complete identical bias conditions; high-gain amplifier topology; single n-type enhancement transistors; size 0.35 mum; transparent TFT technologies; transparent thin-film transistor; Bandwidth; Gain; Logic gates; Power demand; Topology; Transistors; Zinc oxide;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628203
