Title :
Beam-plasma concepts for wafer charging control during ion implantation
Author :
Current, Michael I. ; Vella, Michael C. ; Lukaszek, Wes
Author_Institution :
Dept. of Appl. Mater., Capital of Texas Highway, Austin, TX, USA
Abstract :
With the development of quantitive measures of current-voltage characteristics (CHARM(R)-2) and a beam-plasma model for charge flows to and from the wafer surface, a more comprehensive view of wafer charging has emerged. A beam-plasma model has been developed which describes both positive and negative current-voltage characteristics of the beam plasma. A quantitative description has been achieved for a variety of charge control systems; including dense and dilute plasma flows, electron showers as well as for photoresist outgassing effects
Keywords :
ion implantation; plasma flow; plasma simulation; plasma transport processes; semiconductor process modelling; surface charging; surface potential; CHARM-2; beam-plasma model; charge flows; current-voltage characteristics; dense plasma flow; dilute plasma flow; electron showers; ion implantation; photoresist outgassing effects; wafer charging control; wafer surface; Charge measurement; Control systems; Current measurement; Current-voltage characteristics; Particle beams; Plasma density; Plasma measurements; Plasma properties; Semiconductor device modeling; Surface charging;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586119
