DocumentCode
3478080
Title
Wetting behavior of polymer liquid in insulation process for through silicon via
Author
Songfang Zhao ; Guoping Zhang ; Rong Sun ; Lee, S. W. Ricky
Author_Institution
Shenzhen Inst. of Adv. Technol., Shenzhen, China
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
360
Lastpage
363
Abstract
3D packaging using through silicon via (TSV) technology is becoming important in the integrated circuit (IC) packaging industry. This paper reports the wetting behavior of polymer liquids in the insulation deposition process by spin coating. Two methods containing adding wetting agent into polymer liquid and coupling agent treatments to wafer surface were implemented to improve the wettability between the liquid and the wafer. From the viscosity tests, it was found that the wetting agent could improve the flowability and have little effect on the thixotropy of liquid. Besides, the surface tension of liquid was shifted to 31.14 mN/m from 32.16 mN/m with the addition of wetting agent. The coupling agent treatment to sidewall of vias (silicon) could increase the adhesion work value by at least 8 mN/m and avoid the sagging. Moreover, the wetting dynamics revealed that adding wetting agent to polymer liquid and coupling agent treatments to wafer could improve the wetting rate and decrease the balanced contact angle.
Keywords
adhesion; contact angle; insulation; integrated circuit packaging; spin coating; three-dimensional integrated circuits; wetting; 3D packaging; adhesion work value; contact angle; coupling agent treatment; insulation deposition process; insulation process; integrated circuit packaging; polymer liquid; spin coating technique; through silicon via; wafer surface; wetting agent; wetting behavior; wetting dynamics; Adhesives; Insulation; Liquids; Polymers; Silicon; Surface treatment; Viscosity; balanced contact angle; through silicon via; wettability; wetting behavior;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756489
Filename
6756489
Link To Document