Ultra low power RF cross-coupled VCO design in the subthreshold regime with high immunity to PVT variations in 130nm CMOS technology

Author

Ghorbel, I. ; Haddad, F. ; Rahajandraibe, W.

Author_Institution

Univ. de Toulon, Marseille, France

fYear

2015

fDate

7-10 June 2015

Firstpage

1

Lastpage

4

Abstract

This paper presents a novel design and an optimization methodology of an ultra-low power and low phase noise RF voltage controlled oscillator (VCO). This VCO is based on a PMOS-NMOS cross-coupled topology operating in the subthreshold region. An adaptive body biasing technique is presented in this circuit leading to a high immunity to PVT (P=Process, V=Voltage, and T=Temperature) variations. The VCO, implemented in 130nm CMOS technology, consumes only 63 μW under 0.6 V. The obtained tuning range is about 7.2% from 2.32 GHz to 2.495 GHz; therefore, it can address many wireless communication standards such as Wi-Fi, ANT, ZigBee, IEEE 802.15.4, 6LoWPAN, and Bluetooth.

Keywords

CMOS integrated circuits; UHF oscillators; low-power electronics; optimisation; phase noise; voltage-controlled oscillators; CMOS technology; PMOS-NMOS cross-coupled topology; PVT variations; adaptive body biasing; frequency 2.32 GHz to 2.495 GHz; low phase noise; optimization methodology; power 63 muW; size 130 nm; subthreshold regime; ultra low power RF cross-coupled VCO; voltage 0.6 V; voltage controlled oscillator; CMOS integrated circuits; Phase noise; Power demand; Transconductance; Tuning; Voltage-controlled oscillators; CMOS; LC VCO; PVT; low phase noise; low power; subthreshold;

fLanguage

English

Publisher

ieee

Conference_Titel

New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International

Conference_Location

Grenoble

Type

conf

DOI

10.1109/NEWCAS.2015.7182034

Filename

7182034