On the noise performance of 80nm InAs/In0.7Ga0.3As HEMTs using gate sinking technology

80nm InAs/In_0.7Ga_0.3As HEMTs using Pt gate sinking were characterized for ultra-low power low noise applications. While the epitaxial structure of the device was optimized, the reduction of gate-to-channel distance was achieved from gate sinking process. The device exhibited very high drain current density of 1066 mA/mm and maximum gm of 1900 mS/mm at Vds = 0.5 V. Excellent f_T (f_max) up to 113 GHz (110 GHz) at V_DS = 0.1 V was achieved with very low NF_min of 1.05dB and associated gain of 8.6dB at 17 GHz were achieved at 0.1V V_DS. These results demonstrated the outstanding potential for state-of-art ultra-low power and low noise applications.