An application of MSSD to dielectrically isolated intelligent power IC

Author

Aso, T. ; Mizuide, H. ; Usui, T. ; Akahane, K. ; Ishikawa, N. ; Hide, I. ; Maeda, Y.

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1991

fDate

22-24 Apr 1991

Firstpage

45

Lastpage

48

Abstract

The authors describe the application of MSSD (molten silicon spraying deposition) to a dielectrically isolated intelligent power IC. This IC requires a thick silicon layer with low resistivity as its main current flow region. A 500 μm thick single silicon layer with heavily doped phosphorus (ρ=0.02 Ω-cm) was successfully deposited in a few minutes by using the MSSD method. A vertical n-p-h transistor has been fabricated by this method and has shown good I-V characteristics

Keywords

MOS integrated circuits; elemental semiconductors; integrated circuit technology; power integrated circuits; silicon; spray coating techniques; 500 micron; I-V characteristics; Si:P; dielectrically isolated; intelligent power IC; molten Si spraying deposition; vertical n-p-h transistor; vertical power MOSFET; Argon; Conductivity; Crystallization; Dielectrics; Etching; Grain boundaries; Impurities; Power integrated circuits; Silicon; Spraying;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146063

Filename

146063