A study of wafer charging with CHARM and SPIDER monitors

Author

Current, Michael I. ; Shi, J-H ; Liu, J. ; Chan, Y.D. ; Larson, Larry ; Tripsas, Nick ; Lukaszek, Wes

Author_Institution

Dept. of Appl. Mater., Capital of Texas Highway, Austin, TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

61

Lastpage

64

Abstract

Wafer charging effects in an Applied Materials 9500 implanter were studied for high current As and BF2 implants with EEPROM-based sense and measurement devices (CHARM(R)-2) and transistor structures (SPIDER). The operational modes of the implanter were deliberately driven non-optimal states in order 60 test the sensitivity of the wafer-level monitors. Good correlation was found between data from the CHARM and SPIDER monitors as well as from machine-based indicators, such as the wheel current. A broad and stable operating window was seen for operation under normal conditions

Keywords

EPROM; charge measurement; ion implantation; surface charging; Applied Materials 9500 implanter; CHARM monitor; EEPROM measurement device; SPIDER monitor; Si:As; Si:BF₂; high current implantation; operating window; transistor; wafer charging; wheel current; Current measurement; Implants; Ion beams; Plasma applications; Plasma devices; Plasma measurements; Plasma properties; Plasma sources; Resistors; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586123

Filename

586123