A study of wafer charging with CHARM-2 and large area capacitor monitors

Author

Current, Michael I. ; De Haan, Sander

Author_Institution

Dept. of Appl. Mater., Capital of Texas Highway, Austin, TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

65

Lastpage

68

Abstract

Wafer charging effects in an Applied Materials 9500 implanter were studied for As implants with EEPROM-based sense and measurement devices and capacitors with either large oxide areas or large oxide-poly area ratios. The operation of the Plasma Flow Source; arc discharge current, guide tube voltage and confinement magnets, were varied to study the effects on these various charge monitors. The large-area oxide capacitors responded to conditions that increased the negative charge flows to the wafers. The large-area antenna contains structures responding to conditions that produced positive current flows

Keywords

MOS capacitors; elemental semiconductors; ion implantation; isolation technology; silicon; Applied Materials 9500 implanter; CHARM-2; EEPROM-based sense devices; Si; arc discharge current; confinement magnets; guide tube voltage; large area capacitor monitors; large-area antenna; large-area oxide capacitors; negative charge flows; oxide areas; oxide-poly area ratios; plasma flow source; positive current flows; wafer charging; Arc discharges; Area measurement; Capacitors; Implants; Magnetic materials; Plasma confinement; Plasma devices; Plasma materials processing; Plasma measurements; Plasma sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586125

Filename

586125