• DocumentCode
    3478266
  • Title

    Numerical study on nanowire tunnel FET with dynamic threshold operation architecture

  • Author

    Aixi Zhang ; Jin He ; Xiaoan Zhu ; Yue Hu ; Hao Wang ; Wanling Deng ; Hongyu He ; Ying Zhu ; Xiangyu Zhang ; Mansun Chan

  • Author_Institution
    SOC Key Lab., Peking Univ. Shenzhen, Beijing, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (VT) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in common mode operation, its subthreshold swing (SS) gets steeper, and its drive current is enhanced with no loss of OFF-state current.
  • Keywords
    field effect transistors; nanoelectronics; nanowires; drive current; dynamic threshold operation architecture; gate voltage; nanowire tunnel FET; nanowire tunnel field-effect transistor; subthreshold swing; threshold voltage; Logic gates; danymic threshold (DT); nanowire; numerical simulation; tunnel field-effect transistor (TFET);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628211
  • Filename
    6628211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3478266