A novel design of super-capcitor based on black silicon with atomic layer deposition

Author

Li Zhang ; Danqi Zhao ; Jun He ; Xian Huang ; Fang Yang ; Dacheng Zhang

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Micro/Nano Fabrication, Peking Univ., Beijing, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

In this paper, a novel super-capacitor design based on the black silicon was introduced. The atomic layer deposition was designed to fabricate the dielectric and electrode layer. And the black silicon was chosen for the substrate. A specific MEMS process was also designed to achieve the contact between the metal electrode and electrode layer. The parallel-plate capacitor theory was employed for the capacitance calculation. And the simulation has showed that this novel super-capacitor design has big capacitance and quick charge/discharge speed.

Keywords

atomic layer deposition; capacitance; dielectric materials; electrodes; elemental semiconductors; micromechanical devices; silicon; supercapacitors; MEMS process; Si; atomic layer deposition; black silicon; capacitance calculation; charge-discharge speed; dielectric layer fabrication; electrode layer fabrication; metal electrode; parallel-plate capacitor theory; supercapcitor design; Capacitors; Carbon; Electrodes; Micromechanical devices; Resists; atomic layer desposition; black silicon; capacitance calculation; specific MEMS process;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628214

Filename

6628214