Ionic/electronic hybrid transistor for mimicking forgetting curves

Ionic/electronic hybrid devices have many particular features, such as the effect of lateral electrostatic modulation, electrochemical reaction, etc. Here, silica-based ionic/electronic hybrid transistors were fabricated at room temperature with a capability of mimicking human forgetting behavior. The gate pulse is analogous to rehearsal and the conductance change of the channel is analogous to memory retention. It´s because that the low mobility ions in the dielectric can have a lateral electrostatic modulation to the conductance of channel after gate pulse, which allows the mimicking of the biological behaviors.