Title :
Influence of photoresist on wafer charging during high current arsenic implant
Author :
Lukaszek, Wes ; Reno, S. ; Bammi, R.
Author_Institution :
Wafer Charging Monitors Inc., Woodside, CA, USA
Abstract :
Surface-substrate potentials and charge fluxes observed during a high-current Arsenic implant on a wafer half-covered with photoresist were quantified using a CHARM(R)-2 charging monitor wafer. High negative potentials were observed on the bare portion of the wafer, while high positive potentials were observed on the photoresist-covered portion of the wafer. Substantially enhanced positive charge-flux was observed near the resist edge, on the bare side of the wafer. A model is proposed to explain these phenomena
Keywords :
arsenic; elemental semiconductors; ion implantation; photoresists; silicon; surface charging; surface potential; CHARM-2 monitor; Si:As; charge flux; high current arsenic implantation; photoresist; surface-substrate potential; wafer charging; Current measurement; EPROM; Implants; Resistors; Resists; Semiconductor device modeling; Sensor phenomena and characterization; Surface charging; Threshold voltage; Vehicles;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586135
