• DocumentCode
    3478510
  • Title

    A high self-resonant and quality factor transformer using novel geometry for silicon based RFICs

  • Author

    Hua-Bin Zhang ; Min Cai ; Xiao-Yong He ; Gui-Hui Chen ; Hai-Jun Wu

  • Author_Institution
    Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A novel 24-sided concave-convex geometry monolithic transformer that has high self-resonant frequency and quality factor is presented. It is implemented with the top level thick Cu metal and multiple geometrical structures in 0.13 um CMOS mixed-signal 1P6M salicide back-end process. Compared to those with conventional square, hexagonal and octagonal geometry structure, the novel transformer achieves better quality factor, self-resonant frequency and less chip area. The simulation results show that 1.12, 1 and 0.58 GHz improvements in SRF, and 2.4, 0.9 and 0.3 enhancements in quality factor are obtained respectively when compared to typical square, hexagonal and octagonal transformer with the same inductance of the primary and secondary winding.
  • Keywords
    CMOS integrated circuits; Q-factor; copper; elemental semiconductors; geometry; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; silicon; transformers; CMOS mixed-signal 1P6M salicide back-end process; RFIC; Si; chip area; concave-convex geometry monolithic transformer; frequency 0.58 GHz; frequency 1 GHz; frequency 1.12 GHz; hexagonal transformer; multiple geometrical structures; octagonal transformer; primary winding; quality factor; quality factor transformer; secondary winding; self-resonant frequency factor; self-resonant transformer; size 0.13 mum; square transformer; CMOS integrated circuits; Coils; Couplings; Geometry; Inductance; Q-factor; Radiofrequency integrated circuits; concave-convex structure; monolithic; multiple; self-resonance; transformer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628223
  • Filename
    6628223