DocumentCode
3478510
Title
A high self-resonant and quality factor transformer using novel geometry for silicon based RFICs
Author
Hua-Bin Zhang ; Min Cai ; Xiao-Yong He ; Gui-Hui Chen ; Hai-Jun Wu
Author_Institution
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
A novel 24-sided concave-convex geometry monolithic transformer that has high self-resonant frequency and quality factor is presented. It is implemented with the top level thick Cu metal and multiple geometrical structures in 0.13 um CMOS mixed-signal 1P6M salicide back-end process. Compared to those with conventional square, hexagonal and octagonal geometry structure, the novel transformer achieves better quality factor, self-resonant frequency and less chip area. The simulation results show that 1.12, 1 and 0.58 GHz improvements in SRF, and 2.4, 0.9 and 0.3 enhancements in quality factor are obtained respectively when compared to typical square, hexagonal and octagonal transformer with the same inductance of the primary and secondary winding.
Keywords
CMOS integrated circuits; Q-factor; copper; elemental semiconductors; geometry; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; silicon; transformers; CMOS mixed-signal 1P6M salicide back-end process; RFIC; Si; chip area; concave-convex geometry monolithic transformer; frequency 0.58 GHz; frequency 1 GHz; frequency 1.12 GHz; hexagonal transformer; multiple geometrical structures; octagonal transformer; primary winding; quality factor; quality factor transformer; secondary winding; self-resonant frequency factor; self-resonant transformer; size 0.13 mum; square transformer; CMOS integrated circuits; Coils; Couplings; Geometry; Inductance; Q-factor; Radiofrequency integrated circuits; concave-convex structure; monolithic; multiple; self-resonance; transformer;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628223
Filename
6628223
Link To Document