DocumentCode :
3478549
Title :
Simulation of temperature fields for Cu/Cu joining process by self-propagating reaction
Author :
Baihui Wang ; Wenbo Zhu ; Weisheng Xia ; Hui Liu ; Fengshun Wu
Author_Institution :
Coll. of Mater. Sci. & Eng., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear :
2013
fDate :
11-14 Aug. 2013
Firstpage :
443
Lastpage :
447
Abstract :
Self-propagating reaction is presented as a new heat source for the joining of MEMS and high power devices. However, due to the complex thermal process of self-propagating reaction, the temperature in solder or multilayer foil during the joining process is difficult or even impossible to measure and control. Therefore, more simulation efforts should be carried out to get a better understanding of self-propagating reaction. In this paper, the temperature field is simulated by the finite element method based on Cu/Cu joining using Ni/Al self-propagating multilayer foil. The simulative results are verified by the measured temperature in the actual experiments. Through the simulation, the temperature curves in the multilayer foil, solder and base metal are obtained. The temperature field under different solder thickness and preheating temperature are compared to analyze their effects. In summary, the present study characterizes the temperature field in the joining, and can provide deep understanding for material joining by multilayer foil based self-propagating reaction.
Keywords :
aluminium; copper; finite element analysis; joining processes; micromechanical devices; multilayers; nickel; solders; thermal analysis; MEMS; Ni-Al-Cu; finite element method; heat source; material joining; self-propagating multilayer foil; self-propagating reaction; solder thickness; temperature fields; Finite element analysis; Heating; Nickel; Nonhomogeneous media; Temperature; Temperature measurement; Finite element simulation; Self-propagating reaction; Temperature field;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
Type :
conf
DOI :
10.1109/ICEPT.2013.6756509
Filename :
6756509
Link To Document :
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