DocumentCode
3478632
Title
Quantum Hall resistance standards from a high-mobility molecular beam epitaxy system
Author
Pierz, K. ; Götz, M. ; Pesel, E. ; Ahlers, F.J. ; Schumacher, H.W.
Author_Institution
Phys.-Tech. Bundesanstalt, Braunschweig, Germany
fYear
2010
fDate
13-18 June 2010
Firstpage
621
Lastpage
622
Abstract
We study magnetotransport properties and Hall resistance quantization in a set of AlGaAs/GaAs heterostructures grown in a high-mobility molecular beam epitaxy system. The data show that, with an appropriate choice of growth parameters, the electron mobility in such heterostructures can be reduced and we find good resistance quantization allowing for metrological application.
Keywords
III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; molecular beam epitaxial growth; quantum Hall effect; semiconductor heterojunctions; AlGaAs-GaAs; Hall resistance quantization; electron mobility; high-mobility molecular beam epitaxy; magnetotransport properties; semiconductor heterostructure; Conductivity; Digital signal processing; Electric resistance; Electron mobility; Gallium arsenide; Metrology; Molecular beam epitaxial growth; Quantization; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location
Daejeon
Print_ISBN
978-1-4244-6795-2
Type
conf
DOI
10.1109/CPEM.2010.5544379
Filename
5544379
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