Title :
Quantum Hall resistance standards from a high-mobility molecular beam epitaxy system
Author :
Pierz, K. ; Götz, M. ; Pesel, E. ; Ahlers, F.J. ; Schumacher, H.W.
Author_Institution :
Phys.-Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
We study magnetotransport properties and Hall resistance quantization in a set of AlGaAs/GaAs heterostructures grown in a high-mobility molecular beam epitaxy system. The data show that, with an appropriate choice of growth parameters, the electron mobility in such heterostructures can be reduced and we find good resistance quantization allowing for metrological application.
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; molecular beam epitaxial growth; quantum Hall effect; semiconductor heterojunctions; AlGaAs-GaAs; Hall resistance quantization; electron mobility; high-mobility molecular beam epitaxy; magnetotransport properties; semiconductor heterostructure; Conductivity; Digital signal processing; Electric resistance; Electron mobility; Gallium arsenide; Metrology; Molecular beam epitaxial growth; Quantization; Substrates; Temperature;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
DOI :
10.1109/CPEM.2010.5544379
