Title :
Backside silicon-embedded inductor using magnetic layer for shielding and inductance enhancement
Author :
Rongxiang Wu ; Wei Li ; Yongchun Ren ; Heping Luo ; Guojun Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper, a backside silicon-embedded inductor (BSEI) using a magnetic layer is proposed and studied for magnetic flux shielding and inductance enhancement. With the magnetic layer, the magnetic flux that goes under the BSEI chip is reduced by 2 to 3 times, and consequently the significant BSEI performance degradation in presence of a Cu die pad is effectively suppressed. The inductance of the BSEI is also enhanced by 30% with the magnetic layer. This makes the BSEI more promising for power supply-on-chip applications.
Keywords :
copper; inductors; magnetic flux; magnetic shielding; power supply circuits; silicon; BSEI; Cu; backside silicon-embedded inductor; die pad; inductance enhancement; magnetic flux shielding; magnetic layer; power supply-on-chip application; Magnetic noise; Magnetic shielding; Silicon; Substrates; magnetic shielding; on-chip inductors; power integrated circuits;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628231
