A new method on Cu stress measurement by bandgap voltage reference circuit

Author

Tan Chan Lik ; Tan Chun Keat ; Thilaga, Govindasamy ; Cheng Chin Siong

Author_Institution

Technol. Dept., Infineon Technol. (Kulim) Sdn Bhd, Kulim, Malaysia

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Cu metallization is not only used in low power logic circuit but also in high power automotive application because of its low resistance and robustness in repetitive clamping. How to characterize the stress in Cu metallization is a crucial issue in BEOL integration scheme. In this paper we design a circuit with bandgap reference voltage and overVoltage capability which are able characterize the correlation of Cu stress and in line wafer bow through electrical measurement.

Keywords

copper; energy gap; integrated circuit design; integrated circuit metallisation; reference circuits; stress measurement; BEOL integration scheme; Cu; bandgap voltage reference circuit; but bow; circuit design; electrical measurement; high power automotive application; in line wafer bow; low power logic circuit; metallization; overvoltage capability; stress measurement; Atmospheric measurements; Particle measurements; Photonic band gap; Semiconductor device measurement; Voltage control; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628233

Filename

6628233