• DocumentCode
    347872
  • Title

    Optimizing CMOS transconductors for low power and wideband operation

  • Author

    Guo, Ning ; Raut, Rabin

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
  • Volume
    1
  • fYear
    1999
  • fDate
    9-12 May 1999
  • Firstpage
    491
  • Abstract
    This article addresses a systematic way to maximize the bandwidth versus dc power dissipation performance of CMOS transconductors. It is proposed that the ac transconductance to the dc power dissipation ratio is an appropriate objective function for achieving the optimization. CMOS transconductors realized from four major MOS transistors are examined. Analytical predictions are verified by HSPICE simulation as well as experimental measurements.
  • Keywords
    CMOS analogue integrated circuits; SPICE; VLSI; analogue processing circuits; circuit simulation; harmonic distortion; low-power electronics; CMOS transconductors; HSPICE simulation; MOS transistors; ac transconductance/dc power dissipation ratio; dc power dissipation performance; objective function; wideband operation; Analytical models; Bandwidth; MOSFETs; Power dissipation; Power engineering and energy; Power engineering computing; Transconductance; Transconductors; Voltage; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering, 1999 IEEE Canadian Conference on
  • Conference_Location
    Edmonton, Alberta, Canada
  • ISSN
    0840-7789
  • Print_ISBN
    0-7803-5579-2
  • Type

    conf

  • DOI
    10.1109/CCECE.1999.807247
  • Filename
    807247