DocumentCode :
347872
Title :
Optimizing CMOS transconductors for low power and wideband operation
Author :
Guo, Ning ; Raut, Rabin
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
Volume :
1
fYear :
1999
fDate :
9-12 May 1999
Firstpage :
491
Abstract :
This article addresses a systematic way to maximize the bandwidth versus dc power dissipation performance of CMOS transconductors. It is proposed that the ac transconductance to the dc power dissipation ratio is an appropriate objective function for achieving the optimization. CMOS transconductors realized from four major MOS transistors are examined. Analytical predictions are verified by HSPICE simulation as well as experimental measurements.
Keywords :
CMOS analogue integrated circuits; SPICE; VLSI; analogue processing circuits; circuit simulation; harmonic distortion; low-power electronics; CMOS transconductors; HSPICE simulation; MOS transistors; ac transconductance/dc power dissipation ratio; dc power dissipation performance; objective function; wideband operation; Analytical models; Bandwidth; MOSFETs; Power dissipation; Power engineering and energy; Power engineering computing; Transconductance; Transconductors; Voltage; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 1999 IEEE Canadian Conference on
Conference_Location :
Edmonton, Alberta, Canada
ISSN :
0840-7789
Print_ISBN :
0-7803-5579-2
Type :
conf
DOI :
10.1109/CCECE.1999.807247
Filename :
807247
Link To Document :
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