DocumentCode
347872
Title
Optimizing CMOS transconductors for low power and wideband operation
Author
Guo, Ning ; Raut, Rabin
Author_Institution
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
Volume
1
fYear
1999
fDate
9-12 May 1999
Firstpage
491
Abstract
This article addresses a systematic way to maximize the bandwidth versus dc power dissipation performance of CMOS transconductors. It is proposed that the ac transconductance to the dc power dissipation ratio is an appropriate objective function for achieving the optimization. CMOS transconductors realized from four major MOS transistors are examined. Analytical predictions are verified by HSPICE simulation as well as experimental measurements.
Keywords
CMOS analogue integrated circuits; SPICE; VLSI; analogue processing circuits; circuit simulation; harmonic distortion; low-power electronics; CMOS transconductors; HSPICE simulation; MOS transistors; ac transconductance/dc power dissipation ratio; dc power dissipation performance; objective function; wideband operation; Analytical models; Bandwidth; MOSFETs; Power dissipation; Power engineering and energy; Power engineering computing; Transconductance; Transconductors; Voltage; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 1999 IEEE Canadian Conference on
Conference_Location
Edmonton, Alberta, Canada
ISSN
0840-7789
Print_ISBN
0-7803-5579-2
Type
conf
DOI
10.1109/CCECE.1999.807247
Filename
807247
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