• DocumentCode
    3478721
  • Title

    Simulation of TSV copper electrodeposition process with additives

  • Author

    Wei Luo ; Haiyong Cao ; Liming Gao ; Ming Li

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
  • fYear
    2013
  • fDate
    11-14 Aug. 2013
  • Firstpage
    480
  • Lastpage
    484
  • Abstract
    The kinetics which explained the Copper Super-filling by electrodepostition was investigated since the copper deposition became the standard technique for TSV. A simple numerical model is built to explain the copper deposition process. Consider with the effect of the accelerator, a linear equation is built to explain the relationship between the exchange current density and the coverage of accelerator as well as the relationship of the potential and the coverage of accelerator. The parameter of the equation is investigated in the article. The results show that the linear equation indicates process of copper electrodeposition sufficiently with properly parameters.
  • Keywords
    additives; copper; electrodeposition; integrated circuit modelling; numerical analysis; three-dimensional integrated circuits; TSV copper electrodeposition process; accelerator coverage; accelerator effect; additives; copper super-filling; exchange current density; kinetics; linear equation; numerical model; Additives; Adsorption; Copper; Current density; Equations; Mathematical model; Numerical models; copper deposition; kenitics; linear equation; numerical model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
  • Conference_Location
    Dalian
  • Type

    conf

  • DOI
    10.1109/ICEPT.2013.6756517
  • Filename
    6756517