DocumentCode
3478721
Title
Simulation of TSV copper electrodeposition process with additives
Author
Wei Luo ; Haiyong Cao ; Liming Gao ; Ming Li
Author_Institution
Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
480
Lastpage
484
Abstract
The kinetics which explained the Copper Super-filling by electrodepostition was investigated since the copper deposition became the standard technique for TSV. A simple numerical model is built to explain the copper deposition process. Consider with the effect of the accelerator, a linear equation is built to explain the relationship between the exchange current density and the coverage of accelerator as well as the relationship of the potential and the coverage of accelerator. The parameter of the equation is investigated in the article. The results show that the linear equation indicates process of copper electrodeposition sufficiently with properly parameters.
Keywords
additives; copper; electrodeposition; integrated circuit modelling; numerical analysis; three-dimensional integrated circuits; TSV copper electrodeposition process; accelerator coverage; accelerator effect; additives; copper super-filling; exchange current density; kinetics; linear equation; numerical model; Additives; Adsorption; Copper; Current density; Equations; Mathematical model; Numerical models; copper deposition; kenitics; linear equation; numerical model;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756517
Filename
6756517
Link To Document