DocumentCode :
3478721
Title :
Simulation of TSV copper electrodeposition process with additives
Author :
Wei Luo ; Haiyong Cao ; Liming Gao ; Ming Li
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China
fYear :
2013
fDate :
11-14 Aug. 2013
Firstpage :
480
Lastpage :
484
Abstract :
The kinetics which explained the Copper Super-filling by electrodepostition was investigated since the copper deposition became the standard technique for TSV. A simple numerical model is built to explain the copper deposition process. Consider with the effect of the accelerator, a linear equation is built to explain the relationship between the exchange current density and the coverage of accelerator as well as the relationship of the potential and the coverage of accelerator. The parameter of the equation is investigated in the article. The results show that the linear equation indicates process of copper electrodeposition sufficiently with properly parameters.
Keywords :
additives; copper; electrodeposition; integrated circuit modelling; numerical analysis; three-dimensional integrated circuits; TSV copper electrodeposition process; accelerator coverage; accelerator effect; additives; copper super-filling; exchange current density; kinetics; linear equation; numerical model; Additives; Adsorption; Copper; Current density; Equations; Mathematical model; Numerical models; copper deposition; kenitics; linear equation; numerical model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
Type :
conf
DOI :
10.1109/ICEPT.2013.6756517
Filename :
6756517
Link To Document :
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