• DocumentCode
    3478742
  • Title

    Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor

  • Author

    Ahmed, Zabir ; Mansun Chan

  • Author_Institution
    ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Strain incorporated surface potential based compact model for Carbon Nanotube field effect transistor (CNTFET) is presented in this paper. The model is first of its kind and confers strain phenomena by accounting for the induced change in band-gap and corresponding energy band opening near the Fermi-level of the CNTFET in source exhaustion regime.
  • Keywords
    Fermi level; carbon nanotube field effect transistors; energy gap; CNTFET; Fermi-level; band-gap; carbon nanotube field effect transistor; energy band; source exhaustion regime; strain modeling; surface potential based compact model; Analytical models; Integrated circuit modeling; Numerical models; Strain; CNTFET; source exhaustion; strain effect; strain modeling; surface potential based model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628235
  • Filename
    6628235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3478742