Title :
A physical surface potential model of α-IGZO TFTs
Author :
Xiyue Li ; Bin Li ; Ruohe Yao
Author_Institution :
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
Abstract :
A Physical surface potential model of α-IGZO thin-film transistors based on the Lambert W function is proposed. The model is single-piece and valid in all operation regions above flat band voltage. The distribution of trap states, which includes both exponential deep-level and exponential tail states, is also taken into account. Comparison with the numerical result is accomplished, and good agreement is obtained.
Keywords :
gallium compounds; indium compounds; semiconductor device models; thin film transistors; zinc compounds; α-IGZO TFT; α-IGZO thin-film transistors; InGaZnO; Lambert W function; exponential deep-level state; exponential tail state; flat band voltage; physical surface potential model; trap state distribution; α-IGZO thin-film transistors; Lambert W function; surface potential;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628239
