• DocumentCode
    3478920
  • Title

    Comments on electromigration analysis methods

  • Author

    Zhu, Xinen ; Kotadia, H. ; Xu, Songcen ; Lu, Hai-Han ; Mannan, S.H. ; Bailey, Christopher ; Chan, Y.C.

  • Author_Institution
    Sch. of Comput. & Math. Sci., Univ. of Greenwich, London, UK
  • fYear
    2013
  • fDate
    11-14 Aug. 2013
  • Firstpage
    529
  • Lastpage
    534
  • Abstract
    Failures caused by the electromigration (EM) are becoming a primary reliability concern of integrated circuits and electronics packaging designers and manufacturers. In the foreseeable future, the trend of greater scale integration and further miniaturization in the microelectronics industry is expected to continue and this will make the metallization in electronics devices more susceptible to EM failures. In the last few decades, various methods and techniques have been developed and used in EM analysis and EM-aware designs, and numerical modeling in particular has become a very important tool that makes it easier to accurately understand and predict the behavior of EM under realistic environmental conditions. In this paper, a review has been carried out on EM analysis techniques and models ranging from early empirical models to recent numerical simulation method capable of solving three-dimensional EM problems.
  • Keywords
    electromigration; finite element analysis; integrated circuit metallisation; integrated circuit packaging; EM analysis technique; EM failures; EM-aware design; electromigration analysis methods; electronics device; electronics packaging; integrated circuit reliability concern; metallization; microelectronics industry; three-dimensional EM problem; Current density; Electromigration; Integrated circuit modeling; Mathematical model; Numerical models; Reliability; Stress; electromigration; finite element method; numerical modeling; voids evolution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
  • Conference_Location
    Dalian
  • Type

    conf

  • DOI
    10.1109/ICEPT.2013.6756527
  • Filename
    6756527