DocumentCode
3478920
Title
Comments on electromigration analysis methods
Author
Zhu, Xinen ; Kotadia, H. ; Xu, Songcen ; Lu, Hai-Han ; Mannan, S.H. ; Bailey, Christopher ; Chan, Y.C.
Author_Institution
Sch. of Comput. & Math. Sci., Univ. of Greenwich, London, UK
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
529
Lastpage
534
Abstract
Failures caused by the electromigration (EM) are becoming a primary reliability concern of integrated circuits and electronics packaging designers and manufacturers. In the foreseeable future, the trend of greater scale integration and further miniaturization in the microelectronics industry is expected to continue and this will make the metallization in electronics devices more susceptible to EM failures. In the last few decades, various methods and techniques have been developed and used in EM analysis and EM-aware designs, and numerical modeling in particular has become a very important tool that makes it easier to accurately understand and predict the behavior of EM under realistic environmental conditions. In this paper, a review has been carried out on EM analysis techniques and models ranging from early empirical models to recent numerical simulation method capable of solving three-dimensional EM problems.
Keywords
electromigration; finite element analysis; integrated circuit metallisation; integrated circuit packaging; EM analysis technique; EM failures; EM-aware design; electromigration analysis methods; electronics device; electronics packaging; integrated circuit reliability concern; metallization; microelectronics industry; three-dimensional EM problem; Current density; Electromigration; Integrated circuit modeling; Mathematical model; Numerical models; Reliability; Stress; electromigration; finite element method; numerical modeling; voids evolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756527
Filename
6756527
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