Printed Organic Transistors for Large-Area Electronics

Author

Someya, Takao ; Sakurai, Takayasu ; Sekitani, Tsuyoshi ; Noguchi, Yoshiaki

Author_Institution

Univ. of Tokyo, Tokyo

fYear

2007

fDate

Jan. 16 2007-Yearly 18 2007

Firstpage

6

Lastpage

11

Abstract

We have fabricated large-area, flexible pressure sensors using printed organic field-effect transistor (FET) active matrices. Polyimide precursors and silver nanoparticles are patterned on a polyimide film by using an inkjet printing system and cured at 180degC to form gate dielectric layers and electrodes for organic FETs, respectively. The channel layer of organic transistors is pentacene deposited in the vacuum system. The mobility of the transistors is 0.7 cm²/Vs and the on/off ratio exceeds 10⁶.

Keywords

organic semiconductors; polymer films; pressure sensors; thin film transistors; FET; active matrices; electrodes; flexible pressure sensors; gate dielectric layers; inkjet printing system; large-area electronics; pentacene deposited; polyimide film; polyimide precursors; printed organic transistors; silver nanoparticles; temperature 180 degC; transistors mobility; vacuum system; Active matrix organic light emitting diodes; Dielectrics; Electrodes; FETs; Nanoparticles; OFETs; Polyimides; Printing; Silver; Transistors; Organic transistors; electronic artificial skins; inkjet; large-area actuators; large-area electronics; large-area sensors; printing technology; screen printing;

fLanguage

English

Publisher

ieee

Conference_Titel

Polymers and Adhesives in Microelectronics and Photonics, 2007. Polytronic 2007. 6th International Conference on

Conference_Location

Odaiba, Tokyo

Print_ISBN

978-1-4244-1186-3

Electronic_ISBN

978-1-4244-1186-3

Type

conf

DOI

10.1109/POLYTR.2007.4339127

Filename

4339127