DocumentCode :
3478944
Title :
Minimizing particle contamination in high current ion implanters
Author :
Mack, M.E. ; Angel, G.C. ; Renau, A. ; Brown, D.A.
Author_Institution :
Varian Ion Implant Syst., Gloucester, MA, USA
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
166
Lastpage :
169
Abstract :
Many issues contribute to the particle contamination of implanters. High current systems incur added microdischarging in the post accel system and accelerated erosion of beam defining stops and slits. The Varian VIISion implanter has been designed to include a number of fundamental improvements, which greatly reduce these additional particle contributions. Microdischarging adds negligible additional particles. A novel design mass slit reduces erosion at this point almost 400-fold. Overall particle performance is typically <0.1 cm-2⩾0.2 μm even at full beam current
Keywords :
ion implantation; surface contamination; Varian VIISion implanter; beam definition; erosion; high current ion implanter; mass slit; microdischarge; particle contamination; post accel system; stop; Acceleration; Contamination; Geometry; Implants; Ion implantation; Magnetic analysis; Optical beams; Particle beams; Seals; Structural beams;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586171
Filename :
586171
Link To Document :
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