Control of a III-V epitaxial MOCVD process using ultraviolet absorption concentration monitoring

Author

Flynn, Monique S Gaffney ; Smith, Roy S. ; Abraham, Patrick ; DenBaars, Steven P.

Author_Institution

Litton Guidance & Control Syst., Woodland Hills, CA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

761

Abstract

Metalorganic chemical vapor deposition (MOCVD) is a promising technology for the growth of epitaxial semiconductors. It has traditionally lacked real-time growth monitoring and control, which limits the precise reproducibility needed for high performance devices. Two complementary control approaches are investigated experimentally. The first is a feedforward disturbance rejection strategy using ultrasonic concentration measurements to reject source gas bubbler disturbances. The second is a feedback system using an ultraviolet absorption sensor for real-time monitoring of reaction chamber gas concentrations. Postgrowth X-ray analysis of InP/GaInAs superlattice test devices is used to evaluate control system performance

Keywords

III-V semiconductors; MOCVD; computerised monitoring; feedback; feedforward; process control; real-time systems; vapour phase epitaxial growth; III-V epitaxial MOCVD process; concentration monitoring; disturbance rejection; epitaxial growth; feedback; feedforward; metalorganic chemical vapor deposition; real-time system; superlattice test; ultraviolet absorption; Chemical technology; Chemical vapor deposition; Electromagnetic wave absorption; Feedback; Gas detectors; III-V semiconductor materials; MOCVD; Monitoring; Reproducibility of results; Ultrasonic variables measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Control Applications, 1999. Proceedings of the 1999 IEEE International Conference on

Conference_Location

Kohala Coast, HI

Print_ISBN

0-7803-5446-X

Type

conf

DOI

10.1109/CCA.1999.807757

Filename

807757