UV curing and photoresist outgassing in high energy implantation

Thick photoresists, typically 3 microns or more in thickness, necessary for high energy implantation present some unique problems. The outgassing of thick photoresist in high energy applications varies from that of thinner resist and lower energies. It requires appropriate processing to cure without reticulation of field regions, deformity of features, or blistering during subsequent processing. This paper examines different resist treatments and their effects on implanter pressure during processing. Data on outgassing of thick photoresist, outgassing effects on absolute dose and dose uniformity as measured by sheet resistance contour maps, and the variation in gas composition are presented