DocumentCode :
3479100
Title :
Machine and metrology issues for dose accuracy, repeatability, and uniformity of ion implanters
Author :
Yarling, C.B. ; Current, M.I. ; Marin, T.
Author_Institution :
EEESPEC, Austin, TX, USA
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
198
Lastpage :
201
Abstract :
This paper reviews those vacuum-, beam-, and scan-related problem areas which mean that small dose variations and micro-uniformity must be accounted for during implant processing. A major focus of this paper is the relatively new topic of synchronous noise. Systematic dose fluctuations due to certain resonance combinations of wafer rotation speeds and beam scanning frequencies for electrostatic- and hybrid-scan implanters are reviewed and synchronous noise to disk/wheel spin frequency, scan speed, and voltage frequency in high-current implanters is explored. Finally, both electrical and optical metrology techniques are reviewed for their sensitivity to dose and their ability to resolve small feature scan variations caused by various contributors to small dose fluctuations and micro-uniformity
Keywords :
VLSI; integrated circuit measurement; ion implantation; monitoring; beam scanning frequencies; dose accuracy; dose variations; feature scan variations; ion implanters; metrology issues; repeatability; scan speed; synchronous noise; uniformity; wafer rotation speeds; Electron beams; Fluctuations; Frequency; Implants; Ion beams; Metrology; Optical noise; Particle beams; Phase noise; Vacuum systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586183
Filename :
586183
Link To Document :
بازگشت