DocumentCode :
3479217
Title :
Finite element analysis of electromagnetic fields emitted by an IGBT commutation cell
Author :
Sitzia, A.M.
Author_Institution :
GEC Alsthom Eng. Res. Centre, Stafford, UK
fYear :
1997
fDate :
35761
Firstpage :
42522
Lastpage :
42525
Abstract :
In response to concern over electromagnetic compatibility (EMC) aspects of all types of electrical equipment, numerical techniques for field computation are becomingly increasingly important in the struggle to meet the required EMC standards. This paper describes a programme of work undertaken to assess the suitability of electromagnetic finite element analysis for modelling power electronic circuits, using an IGBT commutation cell as an example
Keywords :
insulated gate bipolar transistors; IGBT commutation cell; electrical equipment; electromagnetic compatibility; electromagnetic field; finite element analysis; numerical technique; power electronic circuit;
fLanguage :
English
Publisher :
iet
Conference_Titel :
High Frequency Simulation: Part Two (Digest No: 1997/374), IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19971263
Filename :
662826
Link To Document :
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