Title :
In-line detection of radial non-uniformity of VT-adjust implants in 200 mm wafers using Hg-probe C-V carrier depth profiling
Author :
Weinzierl, S.R. ; Hillard, R.J. ; Gruber, G.A.
Author_Institution :
Solid State Measurements Inc., Pittsburgh, PA, USA
Abstract :
Variations in VT-adjust implant dose from the center to edge of 200 mm wafers are investigated for both furnace and rapid thermal anneals using highly accurate in-line Hg-probe pulsed C-V measurements. Solid-state diffusion theory is used to verify the observed differences
Keywords :
MOSFET; annealing; capacitance; carrier density; diffusion; ion implantation; rapid thermal annealing; 200 mm; Hg; Hg-probe pulsed C-V measurement; MOSFET threshold voltage; VT-adjust implant; carrier depth profiling; furnace anneal; in-line detection; radial nonuniformity; rapid thermal anneal; semiconductor wafer; solid-state diffusion; Annealing; Capacitance-voltage characteristics; Charge carrier density; Density measurement; Furnaces; Implants; Performance evaluation; Position measurement; Production systems; Pulse measurements;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586192
