DocumentCode :
3479479
Title :
High-power 630-nm-band AIGalnP laser diodes with strain-compensated single quantum well active layer
Author :
Hiroyama, R. ; Nishida, Tsutomu ; Uetani, T. ; Bessho, Y. ; Shono, M. ; Sawada, Masanori ; Ibaraki, A.
Author_Institution :
Microelectronics Research Center, Sanyo Electric Co., Ltd.
Volume :
11
fYear :
1997
fDate :
18-23 May 1997
Firstpage :
335
Lastpage :
336
Keywords :
Diode lasers; Frequency; Nonlinear optics; Optical devices; Optical polymers; Optical recording; Optical refraction; Optical variables control; Photorefractive effect; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4125-2
Type :
conf
DOI :
10.1109/CLEO.1997.603229
Filename :
603229
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3479479
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