Oxide charging induced by electron exposure in ion implantation: quantification and qualification

Author

Stuber, Alan L. ; Lowell, John

Author_Institution

Adv. Micro Devices Inc., Austin, TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

237

Lastpage

240

Abstract

The use of electron showers (a.k.a. flood guns) during ion implantation has been used industry-wide to compensate for the parasitic effects of electrostatic charging caused by energetic ion beams impinging on the wafer surface during processing. Moreover, the wafer surface may be covered by a protective oxide which inhibits the majority of secondary electrons from reaching the wafer surface. Previous work has shown that the surface barrier of the oxidized surface is not significantly changed when flood guns are used which supports this premise. This work is concerned with the effects of the electron exposure on the oxide potential

Keywords

electron beam effects; integrated circuit measurement; ion implantation; surface charging; surface potential; Si:As; Si:As-SiO₂; electron exposure; electron showers; electrostatic charging parasitic effect compensation; energetic ion beams; flood guns; ion implantation; oxide charging; oxide potential; protective oxide; surface barrier; wafer surface; Electron beams; Electrostatics; Floods; Implants; Ion beams; Ion implantation; Plasma immersion ion implantation; Qualifications; Surface charging; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586205

Filename

586205