N-ch IGBT with high reverse blocking capability for multipoint differential line drivers

Author

Fujishima, Naoto ; Yano, Yukio ; Tada, Gen ; Tsuchiya, Kazuhiro

Author_Institution

Fuji Electr. Corp., Matsumoto, Japan

fYear

1991

fDate

22-24 Apr 1991

Firstpage

70

Lastpage

75

Abstract

A 2 μm rule DMOS/CMOS compatible IGBT (insulated-gate bipolar transistor) with high reverse blocking capability has been developed for multipoint differential line drivers. Remarkable improvement of the reverse blocking capability and large latch-up current are achieved due to the formation of the wide N-base, the heavily doped N-buffer, and the P-well around the P-base. The effect of the conductivity modulation, arising from the injected holes, is compared with the DMOSFET in series with a P-ν-N diode

Keywords

insulated gate bipolar transistors; power transistors; 2 micron; CMOS compatible; DMOS compatible; IGBT; conductivity modulation; high reverse blocking capability; insulated-gate bipolar transistor; multipoint differential line drivers; n-channel device; Circuit faults; Cities and towns; Conductivity; Diodes; Driver circuits; Epitaxial layers; Insulated gate bipolar transistors; Integrated circuit interconnections; Power system transients; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146069

Filename

146069