Analytical techniques for measuring contamination introduced during ion implantation

Author

Biswas, Sukanta ; McQuillan, Fiona ; Littlewood, Stephen ; Kelly, Ian ; Edgell, Michael ; Chia, Victor ; Murrell, Adrian J. ; Wauk, Michael T.

Author_Institution

Cascade Sci. Ltd., Brunel Univ., Uxbridge, UK

fYear

1996

fDate

16-21 Jun 1996

Firstpage

245

Lastpage

248

Abstract

Contamination introduced during ion implantation, including transition metals, mobile ions, carbon and particulates can be deposited on the surface of the Si wafer or can be co-implanted to depths of 100s of angstroms. Tools used today to measure these contaminants include magnetic sector SIMS (Secondary Ion Mass Spectrometry), quadrupole SIMS, (TOF) Time of Flight SIMS, surface SIMS or “O” (Oxygen)-leak SIMS, Total Reflection X-Ray Fluorescence (TXRF), Vapour Phase Decomposition (VPD)-TXRF, VPD-AA (Atomic absorption) and Minority Carrier LifeTime (MCLT). In this paper, some of the advantages and shortfalls of using the above techniques are considered for the measurement of heavy metals, mobile ions, aluminium and cross-contamination of dopants introduced during ion implantation

Keywords

X-ray fluorescence analysis; atomic absorption spectroscopy; carrier lifetime; chemical variables measurement; integrated circuit measurement; ion implantation; mass spectroscopic chemical analysis; minority carriers; secondary ion mass spectroscopy; spectrochemical analysis; surface contamination; time of flight mass spectra; Si; Si wafer surface; aluminium; analytical techniques; atomic absorption; carbon; co-implantation; contamination measurement; cross-contamination; heavy metals; ion implantation; magnetic sector SIMS; minority carrier lifetime; mobile ions; oxygen-leak SIMS; particulates; quadrupole SIMS; surface SIMS; time of flight SIMS; total reflection X-ray fluorescence; transition metals; vapour phase decomposition-TXRF; Atomic measurements; Fluorescence; Ion implantation; Magnetic analysis; Mass spectroscopy; Phase measurement; Pollution measurement; Reflection; Surface contamination; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586212

Filename

586212