• DocumentCode
    3479710
  • Title

    Particle-scattering phenomenon of powders caused by charging voltage of the surface during ion implantation

  • Author

    Ishikawa, Junzo ; Tsuji, Hiroshi ; Gotoh, Yasuhito

  • Author_Institution
    Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    249
  • Lastpage
    252
  • Abstract
    The particle-scattering phenomenon caused by charge-up in ion implantation into spherical dielectric powders in a stationary state or in a vibrational state with no neutralizer was studied theoretically and experimentally. The theoretical threshold charging voltage for scattering was obtained from the force balance equation between the Coulomb repulsive force and the attractive van der Waals force and gravity. The estimated charging voltage which starts scattering of powders agrees well with experimental results for positive-ion implantation into powders both in a stationary state and a vibrational state. Scattering took place even at an ion acceleration voltage of about 1 kV for positive-argon-ion implantation. Conversely, no scattering was observed for negative-carbon-ion implantation at an ion acceleration voltage of 20 kV in a stationary state. The negative-ion implantation technique was found to be a non-scattering implantation method for dielectric powders
  • Keywords
    ion implantation; negative ions; powder technology; surface charging; van der Waals forces; 1 kV; 20 kV; Ar+-ion implantation; C--ion implantation; Coulomb repulsive force; attractive van der Waals force; catalysis industry; dental treatment; force balance equation; gravity; ion acceleration voltage; ion implantation; nonscattering implantation method; particle-scattering phenomenon; positive-ion implantation; powders; spherical dielectric powders; stationary state; surface charging voltage; threshold charging voltage; vibrational state; Acceleration; Dielectrics; Equations; Gravity; Ion implantation; Particle scattering; Powders; State estimation; Stationary state; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586215
  • Filename
    586215