A simulation of IGBT module under power cycling test condition

Author

Xueyin Zhang ; Kailong Yang ; Ming Li ; Ming Chen ; Liming Gao

Author_Institution

Sch. of Mater. Sci. & Eng., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2013

fDate

11-14 Aug. 2013

Firstpage

754

Lastpage

760

Abstract

The performance of IGBT (Insulated Gate Bipolar Transistor) power module under power cycling test is investigated based on a FEA (Finite Element Analysis) method. Critical point of solder fatigue has been discovered through analysis. Thermal cycling test has also been simulated as a comparison. The impact of power module parameters, such as power dissipation of chip, cycle period, solder layer thickness and heat spreader has been studied through DOS (Design of Simulation). The disciplinary conclusion can be a reference for package design.

Keywords

finite element analysis; hybrid electric vehicles; insulated gate bipolar transistors; power supply circuits; solders; FEA; IGBT module; cycle period; design of simulation; finite element analysis; heat spreader; insulated gate bipolar transistor power module; package design; power cycling test condition; power dissipation; power module parameters; solder fatigue; solder layer thickness; thermal cycling test; Load modeling; Multichip modules; Plastics; Silicon; Strain; Stress; FEA; power cycling; power module;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2013 14th International Conference on

Conference_Location

Dalian

Type

conf

DOI

10.1109/ICEPT.2013.6756575

Filename

6756575