3479930

An Automatic Temperature Compensation Of Internal Sense Ground For Sub-quarter Micron Drams

Ooishi, T. ; Hamade, K. ; Asakura, M. ; Yasuda, K. ; Hidaka, H. ; Miyamoto, H. ; Ozaki, H.

Ulsi Laboratory, Mitsubishi Electric Corporation, Itami, Japan

1994

9-11 June 1994

77

78

Circuits; Laboratories; Land surface temperature; Leakage current; Random access memory; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage; Ultra large scale integration;

English

ieee

VLSI Circuits, 1994. Digest of Technical Papers., 1994 Symposium on

Honolulu, HI, USA

0-7803-1918-4

conf

10.1109/VLSIC.1994.586224

586224