DocumentCode :
3480017
Title :
A 256m Dram With Simplified Register Control For Low Power Self Refresh And Rapid Burn-in
Author :
Seung-Moon Yoo ; Jin Man Han ; Ejaz Haq ; Sei Seung Yoon ; Se-Jin Jeong ; Byung Chul Kim ; Jung-Hwa Lee ; Tae-Seong Jang ; Hyung-Dong Kim ; Chan Jong Park ; Dong Il Seo ; Chang Sik Choi ; Soo-In Cho ; Chang Gyu Hwang
Author_Institution :
Product Development Center, Memory Devices Business, Samsung Electronics Co.
fYear :
1994
fDate :
9-11 June 1994
Firstpage :
85
Lastpage :
86
Keywords :
CMOS technology; Costs; Counting circuits; Delay; Drives; Power supplies; Product development; Radio control; Random access memory; Registers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1994. Digest of Technical Papers., 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1918-4
Type :
conf
DOI :
10.1109/VLSIC.1994.586228
Filename :
586228
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3480017
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