• DocumentCode
    3480017
  • Title

    A 256m Dram With Simplified Register Control For Low Power Self Refresh And Rapid Burn-in

  • Author

    Seung-Moon Yoo ; Jin Man Han ; Ejaz Haq ; Sei Seung Yoon ; Se-Jin Jeong ; Byung Chul Kim ; Jung-Hwa Lee ; Tae-Seong Jang ; Hyung-Dong Kim ; Chan Jong Park ; Dong Il Seo ; Chang Sik Choi ; Soo-In Cho ; Chang Gyu Hwang

  • Author_Institution
    Product Development Center, Memory Devices Business, Samsung Electronics Co.
  • fYear
    1994
  • fDate
    9-11 June 1994
  • Firstpage
    85
  • Lastpage
    86
  • Keywords
    CMOS technology; Costs; Counting circuits; Delay; Drives; Power supplies; Product development; Radio control; Random access memory; Registers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 1994. Digest of Technical Papers., 1994 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-1918-4
  • Type

    conf

  • DOI
    10.1109/VLSIC.1994.586228
  • Filename
    586228