DocumentCode
3480017
Title
A 256m Dram With Simplified Register Control For Low Power Self Refresh And Rapid Burn-in
Author
Seung-Moon Yoo ; Jin Man Han ; Ejaz Haq ; Sei Seung Yoon ; Se-Jin Jeong ; Byung Chul Kim ; Jung-Hwa Lee ; Tae-Seong Jang ; Hyung-Dong Kim ; Chan Jong Park ; Dong Il Seo ; Chang Sik Choi ; Soo-In Cho ; Chang Gyu Hwang
Author_Institution
Product Development Center, Memory Devices Business, Samsung Electronics Co.
fYear
1994
fDate
9-11 June 1994
Firstpage
85
Lastpage
86
Keywords
CMOS technology; Costs; Counting circuits; Delay; Drives; Power supplies; Product development; Radio control; Random access memory; Registers;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 1994. Digest of Technical Papers., 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1918-4
Type
conf
DOI
10.1109/VLSIC.1994.586228
Filename
586228
Link To Document