Title :
Electro-migration of silver alloy wire with its application on bonding
Author :
Shenggang Wang ; Liming Gao ; Ming Li ; Dacheng Huang ; Ken Qian ; Chiu, Huang-Jen
Author_Institution :
Sch. of Mater. Sci. & Eng. (SMSE), Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
In recent years, silver alloy wire has been widely used in semiconductor industry. In contrast to conventional gold wire, silver alloy wire has better electrical property, thermal conductivity and lower cost while tends to migrate more easily under high temperature and current density. In this paper, electro-migration (EM) of silver alloy wire after wire bonding has been studied. Under accelerated test, cracks forms not only on silver alloy wire surface but also in silver alloy wire while gold wire remain the same. Silver ion not only migrates on the wire surface also inside the wire. Temperature and current density both accelerate the EM. The conclusion could be a reference for further gold reduction of Au/Ag alloy wire in semiconductor bonding.
Keywords :
cracks; electromigration; gold alloys; integrated circuit bonding; integrated circuit interconnections; integrated circuit packaging; lead bonding; semiconductor device packaging; semiconductor industry; silver alloys; Ag; Au; EM; current density; electrical property; electromigration; gold reduction; semiconductor bonding; semiconductor industry; silver alloy wire surface; silver ion; thermal conductivity; wire bonding; Bonding; Gold; Silver; Stress; Surface morphology; Wires; accelerate; cracks; electromigration; silver alloy wire; wire bonding;
Conference_Titel :
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location :
Dalian
DOI :
10.1109/ICEPT.2013.6756583