Analysis of accelerator consumption in TSV copper electroplating

Author

Qi Sun ; Haiyong Cao ; Huiqin Ling ; Ming Li

Author_Institution

Inst. of Microelectron. Mater. & Technol., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2013

fDate

11-14 Aug. 2013

Firstpage

818

Lastpage

821

Abstract

Accelerator consumption was analyzed by electrochemical method. As the presence of SPS and PEG in the acidic cupric sulfate solution with chloride ions, the cathodic polarization curves become have peaks and valleys. The peak and valley have a strong association with the additive concentration and are associated with the electroplating process. The effect of electroplating time on the cathodic polarization curves is similar to the effect of SPS concentration. The linear relation between parameter Q with the concentration of SPS is Q = 0.007624 + 0.150992C_SPS. The parameter Q is useful for the analysis of SPS consumption in TSV copper electroplating. The real deposition in TSV verifies that SPS consumption in the process of plating can be obtained by analyzing cathodic polarization curves.

Keywords

electrochemistry; electroplating; integrated circuit packaging; polymers; three-dimensional integrated circuits; PEG; SPS; TSV copper electroplating process; accelerator consumption analysis; acidic cupric sulfate solution; additive concentration; bis-(3-sodiumsulfo-propyl disulfide); cathodic polarization curve; chloride ion; electrochemical method; polyethylene glycol; Additives; Copper; Electronics packaging; Ions; Standards; Sun; Through-silicon vias; Accelerator; Cathodic polarization curve; Consumption; Eletrodeposition; Through-silicon via;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Packaging Technology (ICEPT), 2013 14th International Conference on

Conference_Location

Dalian

Type

conf

DOI

10.1109/ICEPT.2013.6756589

Filename

6756589