Title :
An analytical IGBT model for power circuit simulation
Author :
Shen, Zheng ; Chow, T. Paul
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
On the basis of the physical picture obtained by a detailed two-dimensional numerical simulation, an analytical CAD (computer-aided design) model for an IGBT (insulated-gate bipolar transistor) is developed which has sufficient flexibility to account for the unique characteristics of IGBT operation, while still retaining a mathematically simple form with readily extractable model parameters. The static model has been implemented in the circuit simulator SPICE. A systematic method of DC model parameter extraction is developed based on the parameter optimization program TOPEX. A set of model parameters extracted for a n-channel 600-V, symmetric IGBT is shown. Good agreement has been obtained between the simulation results and measurements
Keywords :
electronic engineering computing; equivalent circuits; insulated gate bipolar transistors; power transistors; semiconductor device models; DC model parameter extraction; IGBT model; SPICE; TOPEX; computer-aided design; insulated-gate bipolar transistor; parameter optimization program; power circuit simulation; static model; transient model; two-dimensional numerical simulation; Analytical models; Circuit simulation; Computational modeling; Design automation; Insulated gate bipolar transistors; Insulation; Mathematical model; Numerical simulation; Power system modeling; SPICE;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146071
