Title :
The Source Sensed Sram (S3) Cell
Author_Institution :
AT&T Bell Laboratories
Keywords :
Application specific integrated circuits; Capacitance; Circuit noise; Delay; Inverters; Rails; Random access memory; Topology; Voltage; Writing;
Conference_Titel :
VLSI Circuits, 1994. Digest of Technical Papers., 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1918-4
DOI :
10.1109/VLSIC.1994.586245
