Account for Radiation Effects in Signal Integrity Analysis of PCB Digital Systems

Author

Petrosyants, K.O. ; Kharitonov, I.A.

Author_Institution

Moscow Inst. of Electron. & Math., Nat. Res. Univ. “Higher Sch. of Econ.”, Moscow, Russia

fYear

2013

fDate

4-6 Sept. 2013

Firstpage

479

Lastpage

482

Abstract

A method of account for radiation effects (total dose and particle fluence) in signal integrity analysis of digital system by using IBIS model is presented. It is shown that account for these effects in IBIS models can be performed by correction the input impedances of protection circuits (GND_Clamp and POWER_Clamp), output MOSFETs (PULL_UP, PULL_DOWN) characteristics and RAMP parameters in according with the known physical relations. Examples of digital IC output and cross talk signals simulation with Hyper Lynx software using the created IBIS model is presented.

Keywords

MOSFET; digital integrated circuits; printed circuits; radiation effects; signal processing; HyperLynx software; IBIS model; MOSFET; PCB digital systems; RAMP parameters; crosstalk signal simulation; digital IC output; digital system; physical relations; protection circuits; radiation effects; signal integrity analysis; Analytical models; Clamps; Integrated circuit modeling; MOSFET; Radiation effects; Semiconductor device modeling; IBIS model; MOSFET parameters; diode parameters; radiation effects; signal integrity;

fLanguage

English

Publisher

ieee

Conference_Titel

Digital System Design (DSD), 2013 Euromicro Conference on

Conference_Location

Los Alamitos, CA

Type

conf

DOI

10.1109/DSD.2013.118

Filename

6628317