Across-wafer channeling variations on batch implanters: a graphical technique to analyze spinning disk systems

Larger wafer sizes exacerbate across-wafer channeling variations in spinning disk implanters. As geometries shrink, tighter control of localized and across-wafer uniformities and dopant depth profiles are forcing implant technologists to understand the details of channeling effects. We report a simple technique for analysis of across-wafer channeling variations in terms of implant angle variations on batch wafer spinning disk systems for ⟨100⟩ silicon. This technique is valid for both fixed angle and variable angle systems with polar tilt/twist or gyroscopic dual tilt systems