In-situ ion beam profiling by fast scan sampling

Two dimensional beam current density profiling in production ion implanters is a tool which can be used to achieve control over process effects such as charging, implant temperature, uniformity, contamination and defect structures that are all increasing in importance as device dimensions continue to shrink. Numerous methods exist to map beam profiles including microfaraday´s and multi-wire pickups, however, none enjoy the benefits possible with the spiral hole backside faraday measurement system. The non invasive system of measurement eliminates any chance of system contamination found with other mapping techniques and only adds about 100 ms to each implant. System design aspects will be discussed along with presentation of sample profiles and verification of the mapping technique