Title :
The effect of nickel thickness in nickel-induced-lateral-crystallization of amorphous Si
Author :
Cheng, C.F. ; Leung, T.C. ; Chan, W.Y. ; Poon, M.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Sai Kung, China
Abstract :
Nickel-Induced-Lateral-Crystallization (NILC) is highly considered as a low temperature alternative method for Solid-Phase-Crystallization (SPC). It can be employed to fabricate high performance TFTs. In this paper, the effect of Ni thickness on NILC was studied. It was found that the performance of an NILC TFT was improved when a thicker nickel thin film was used in the NILC process
Keywords :
MOSFET; amorphous semiconductors; crystallisation; elemental semiconductors; metallic thin films; nickel; semiconductor technology; silicon; silicon-on-insulator; thin film transistors; NILC TFT; Ni induced lateral crystallization; Ni thickness; Ni thin film; Ni-SiO2-Si-SiO2-Si; SOI technology; amorphous Si; high performance TFTs; metal induced lateral crystallization; poly-Si layer; Amorphous materials; Amorphous silicon; Annealing; Crystallization; Fabrication; Nickel; Performance analysis; Temperature; Thin film transistors; Voltage;
Conference_Titel :
TENCON 2001. Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology
Print_ISBN :
0-7803-7101-1
DOI :
10.1109/TENCON.2001.949711
