Title :
Improved oxide quality on polysilicon by enhanced Metal-Induced-Lateral-Crystallization (MILC)
Author :
Chan, Alain Chun-Keung ; Wang, Hongmei ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
The characteristics of thermal polyoxide grown on Large-grain Polysilicon-On-Insulator (LPSOI) formed by high temperature enhanced Metal-Induced-Lateral-Crystallization (MILC) have been investigated. Comparing with conventional polysilicon film, the LPSOI film has reduced surface roughness and smaller number of grain boundaries. The improved polysilicon quality leads to better thermal oxide quality, especially at small device dimension relative to the grain size. Intrinsic oxide characteristics such as breakdown voltage, leakage current and charge-to-breakdown value have been experimentally measured. Significant improvement in both oxide quality and device-to-device variation is reported
Keywords :
MOS capacitors; annealing; crystallisation; flash memories; grain boundaries; grain size; oxidation; silicon-on-insulator; surface topography; Fowler-Nordheim tunneling; MOS capacitors; Si; Si-SiO2; annealing; breakdown voltage; charge-to-breakdown value; device-to-device variation; flash memory; gate voltage shift; grain location; high temperature enhanced; improved oxide quality; improved polysilicon quality; large-grain polysilicon-on-insulator; leakage current; local current density enhancement; metal-induced-lateral-crystallization; reduced surface roughness; small device dimension; smaller number of grain boundaries; thermal polyoxide; Dielectrics; Grain boundaries; Grain size; Nickel; Rough surfaces; Silicon; Strips; Surface roughness; Temperature; Thickness measurement;
Conference_Titel :
TENCON 2001. Proceedings of IEEE Region 10 International Conference on Electrical and Electronic Technology
Print_ISBN :
0-7803-7101-1
DOI :
10.1109/TENCON.2001.949713
