DocumentCode
3480822
Title
A vertical cavity GaIlAs/AlAs DBR surface emitting laser and its lasing characteristics
Author
Sakaguchi, T. ; Koyama, Fumio ; Iga, Kenichi
fYear
1988
fDate
Aug. 29 1988-Sept. 1 1988
Firstpage
162
Lastpage
163
Abstract
This paper presents the first room temperature pulsed operation of a vertical cavity surface emitting (SE) laser with an electrically conductive GaAlAs/AlAs DBR. A necessary criterion for lasing operation of SE lasers [1] is discussed by using the result obtained.
Keywords
distributed Bragg reflector lasers; integrated optics; semiconductor junction lasers; GaAlAs-AlAs; SiO/sub s/; TiO/sub 2/; coherent grating surface; monolithic laser waveguide butt-coupling scheme; surface emitting laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International
Conference_Location
Boston, MA, USA
Type
conf
DOI
10.1109/SLCON.1988.26202
Filename
26202
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