A new device model of VDMOSFET for SPICE simulations

Author

Dogan, Numan S. ; Lozano, Elias

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA

fYear

1991

fDate

22-24 Apr 1991

Firstpage

84

Lastpage

88

Abstract

The authors present a novel SPICE model for VDMOSFET which is based on analytical expressions for I-V and C-V characteristics of the device. The device model parameters were extracted from measured I-V and C -V characteristics of Siliconix VNDU 12 and DC52 VDMOSFETs. The model has been incorporated in the source code of SPICE3C1 which runs on IBM PC or compatible. Simulations using this model agree well with experimental data for both DC and transient responses. The model can be used in the simulation and design of switching power supplies and other circuits which use power MOSFETs

Keywords

circuit analysis computing; equivalent circuits; insulated gate field effect transistors; power transistors; semiconductor device models; C-V characteristics; DC model; DC52; SPICE model; SPICE simulations; SPICE3C1; Siliconix; VDMOSFET; VNDU 12; device model parameters; transient responses; Capacitance; Capacitors; Circuit simulation; Computational modeling; Feedback; Libraries; MOSFETs; SPICE; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146073

Filename

146073