Resistive deceleration in the xRLEAP implanter

Conventional deceleration methods usually employ high voltage power supplies to generate the negative electric field in the post acceleration region of an Ion Implanter. Apart from the expense of such supplies, additional loading is required to maintain correct deceleration supply current flow direction. This paper describes a new deceleration system employing a fast response variable resistance that uses the beam energy to generate the deceleration potential. Details of a practical implementation on the new xRLEAP Implanter are given and results on the wafer for a very low energy implant are shown