DocumentCode
3480978
Title
High performance modulators using MOSFETs
Author
Oicles, J.A. ; Grant, J.R.
Author_Institution
Power Spectra Inc., Fremont, CA, USA
fYear
1988
fDate
20-22 Jun 1988
Firstpage
34
Lastpage
38
Abstract
Power metal-oxide-semiconductor field effect transistors (MOSFETs) are emerging as a desirable alternative to more established switching technologies in high-voltage modulators. Available single-die devices are specified to control over 50 kW of peak power. A simple stacking arrangement is presented which can supply output pulses of 5 kV or greater into low-impedance loads at high repetition rates and with low jitter. The basic circuit module is configured without output transformers and provides a flexible floating-deck high-voltage switch function amenable to thick-film hybrid packaging
Keywords
field effect transistor circuits; modulators; pulse generators; 5 kV; 50 kW; flexible floating-deck HV switch function; modulators; thick-film hybrid packaging; Capacitance; Costs; FETs; Impedance; MOSFETs; Power semiconductor switches; Pulse modulation; Radar; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Modulator Symposium, 1988. IEEE Conference Record of the 1988 Eighteenth
Conference_Location
Hilton Head, SC
Type
conf
DOI
10.1109/MODSYM.1988.26231
Filename
26231
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