• DocumentCode
    3480978
  • Title

    High performance modulators using MOSFETs

  • Author

    Oicles, J.A. ; Grant, J.R.

  • Author_Institution
    Power Spectra Inc., Fremont, CA, USA
  • fYear
    1988
  • fDate
    20-22 Jun 1988
  • Firstpage
    34
  • Lastpage
    38
  • Abstract
    Power metal-oxide-semiconductor field effect transistors (MOSFETs) are emerging as a desirable alternative to more established switching technologies in high-voltage modulators. Available single-die devices are specified to control over 50 kW of peak power. A simple stacking arrangement is presented which can supply output pulses of 5 kV or greater into low-impedance loads at high repetition rates and with low jitter. The basic circuit module is configured without output transformers and provides a flexible floating-deck high-voltage switch function amenable to thick-film hybrid packaging
  • Keywords
    field effect transistor circuits; modulators; pulse generators; 5 kV; 50 kW; flexible floating-deck HV switch function; modulators; thick-film hybrid packaging; Capacitance; Costs; FETs; Impedance; MOSFETs; Power semiconductor switches; Pulse modulation; Radar; Switching circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator Symposium, 1988. IEEE Conference Record of the 1988 Eighteenth
  • Conference_Location
    Hilton Head, SC
  • Type

    conf

  • DOI
    10.1109/MODSYM.1988.26231
  • Filename
    26231